Polarization-Doped Field Effect Transistors with Increased Performance

Tech ID: 23311 / UC Case 2004-163-0

Brief Description

A new method for altering semiconductor properties in field effect transistors using “polarization doping.”

Background

Bulk doping in novel III-V electronic materials used for field effect transistors exhibit strong spontaneous and piezoelectric polarization. Previous bulk doping was achieved using impurity doping. However, this method produces impurity scattering resulting in less mobility and decreased carrier concentration at low temperatures.

 

Description

Researchers at the University of California, Santa Barbara have developed a new method for altering semiconductor properties in field effect transistors using “polarization doping.” The resulting polarization-doped field effect transistors (PolFETs) are free from the problems associated with ionized impurity scattering and are able to achieve higher currents and transconductance than equivalent impurity-doped FETs. When compared to traditional impurity doped transistors, these PolFETs also exhibited higher mobility, lower temperature operations, and a higher breakdown field.

 

Advantages

•    Higher Mobility

•    High Power

•    Low Temperature Operations

•    No Impurity Scattering

•    High Breakdown Field in AlGaN

•    No carrier freeze-out

 

Applications

•    Microwave transistors

•    High-frequency power amplification  

 

This technology is available for licensing. Click here to request more information.

 

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 7,525,130 04/28/2009 2004-163
 

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Keywords

polarization doping, field effect transistors, indcircuit, indFET, indtelecom, indpowerelec, indaltenergy

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