Novel Current-Blocking Layer in High-Power Current Aperture Vertical Electron Transistors (CAVETs)

Tech ID: 22364 / UC Case 2011-831-0

Brief Description

A process for creating a novel type of active current-blocking layer to allow the device current to only pass through the aperture.

Background

A Current Aperture Vertical Electron Transistor (CAVET) is a vertical device consisting of an n-type doped drift region to hold voltage and a horizontal region to carry current flowing from the source to the drain through an aperture. A current blocking layer is employed in such devices to block the current from flowing through any other direction but the aperture.

Description

Researchers at the University of California, Santa Barbara have developed a process for creating a novel type of active current-blocking layer to allow the device current to only pass through the aperture. This current-blocking layer effectively restricts the movement of current to only one direction to improve device functionality and reliability. The careful confinement of the device current allows for highly reliable and smooth high-frequency switching as well as high-power switching.

Advantages

  • Simple device manufacturing process
  • Improved device reliability and performance
  • Smooth high-frequency switching

Applications


  • High-power & high-frequency switching


Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 9,590,088 03/07/2017 2011-831
United States Of America Issued Patent 8,937,338 01/20/2015 2011-831
 

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Inventors

  • Ben Yaacov, Ilan
  • Chowdhury, Srabanti
  • Hurni, Christophe
  • Mishra, Umesh K.
  • Yeluri, Ramya

Other Information

Keywords

CAVET, indcircuit, indssl, indpowerelec, indaltenergy, indmicroelec, indfeat

Categorized As