Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
Tech ID: 22342 / UC Case 2005-144-0
Brief Description
A method of fabricating solid state lasers with embedded structures for improved performance via patterning.
Background
There is a need to improve the performance of horizontal emitting, vertical emitting, beam shaped and distributed feedback lasers. Traditionally, photonic crystals placed on the surface of the devices have been used to improve performance.
Description
Researchers at UCSB have developed a method of fabricating solid state lasers with embedded structures for improved performance via patterning. The patterned layer(s) may be engineered to act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element, etc. for the active layers. The primary advantage of this technology is that it provides for fabrication of all the needed functionality in one lithography step via patterning.
Advantages
- Improved performance of the laser
- Improved contact structures and reduced waveguiding loss by contact electrodes
- Fabrication via one lithography step makes this invention easily manufacturable at low cost
Applications
- Fiber optic networks
- Instrumentation lasers
- Optical spectroscopy
This technology is available for licensing.
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 7,723,745 | 05/25/2010 | 2005-144 |
Contact
- University of California, Santa Barbara Office of Technology & Industry Alliances
- dobis@tia.ucsb.edu
- tel: View Phone Number.
Inventors
- David, Aurelien J.
- DenBaars, Steven P.
- Speck, James S.
- Weisbuch, Claude C.
Other Information
Keywords
SolidState, Photonic, Crystal, Laser, indssl, indled
Additional Technologies by these Inventors
- Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
- High Efficiency LED with Optimized Photonic Crystal Extractor
- Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
- Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
- Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
- Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
- Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
- Defect Reduction in GaN films using in-situ SiNx Nanomask
- Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
- Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
- Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
- Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
- Volumetric Hole Injection with Intentional V-Defects
- Low Temperature Deposition of Magnesium Doped Nitride Films
- Transparent Mirrorless (TML) LEDs
- Laser Diode With Tunnel Junction Contact Surface Grating
- Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
- High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
- Method for Growing Self-Assembled Quantum Dot Lattices
- Method for Enhancing Growth of Semipolar Nitride Devices
- III-Nitride Tunnel Junction with Modified Interface
- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- Increased Light Extraction with Multistep Deposition of ZnO on GaN
- Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
- Selective-Area Mesoporous Semiconductors And Devices For Optoelectronic And Photonic Applications
- High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
- Incorporating Temperature-Sensitive Layers in III-N Devices
- Oxyfluoride Phosphors for Use in White Light LEDs
- Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
- (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
- MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
- Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
- Heterogeneously Integrated GaN on Si Photonic Integrated Circuits
- Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
- Methods for Fabricating III-Nitride Tunnel Junction Devices
- Low-Droop LED Structure on GaN Semi-polar Substrates
- Contact Architectures for Tunnel Junction Devices
- Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
- Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
- Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
- Growth of Semipolar III-V Nitride Films with Lower Defect Density
- III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
- Solid Solution Phosphors for Use in Solid State White Lighting Applications
- Tunable White Light Based on Polarization-Sensitive LEDs
- Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
- Growth of High-Performance M-plane GaN Optical Devices
- Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
- Improved Anisotropic Strain Control in Semipolar Nitride Devices
- High Light Extraction Efficiency III-Nitride LED
- Photoelectrochemical Etching for Chip Shaping Of LEDs
- III-V Nitride Device Structures on Patterned Substrates
- Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
- Method for Increasing GaN Substrate Area in Nitride Devices
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
- Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
- GaN-Based Thermoelectric Device for Micro-Power Generation
- Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
- Improved Manufacturing of Semiconductor Lasers
- LED Device Structures with Minimized Light Re-Absorption
- Growth of Planar Semi-Polar Gallium Nitride
- Nonpolar (Al, B, In, Ga)N Quantum Well Design
- UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
- Integration And Mass Transfer Of Microleds
- Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
- Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
- Wafer Bonding for Embedding Active Regions with Relaxed Nanofeatures
- Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
