Silicide-Induced Air Gaps

Tech ID: 19240 / UC Case 2009-131-0

Brief Description

Investigators at the University of California, Berkeley have developed silicidation-induced air gaps, an innovative release etching method with many advantages over currently available methods. With this technique, optimal chip designs that were previously impractical due to limitation in current release methods, will now be obtainable. Additionally, for implantable medical device applications, the innovative silicidation-induced air gaps method will avoid current chemical contaminates of philological concern, especially when implanted permanently in the body.

Applications

- CMOS fabrication
- MEMS integration into CMOS processes
- Implantable medical devices
- Sub-50nm narrow gaps
- High Aspect Ratio Lateral Gaps

Advantages

- Fast and Cheaper Release
- Release Time Independent of Structure Aspect-Ratio
- Stiction-Free, Clean Release
- Robust Post-Package Release
- Localized Release

Patent Status

Country Type Number Dated Case
United States Of America Issued Patent 8,704,316 04/22/2014 2009-131
 

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Inventors

  • Hung, Li-Wen
  • Nguyen, Clark Tu-Cuong

Other Information

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