Relaxed SiGe has become an important material in the fabrication of high-quality films for various applications. Strain-relaxed SiGe buffers have been produced by at least three known methods. However, these techniques present several disadvantages, such as long growth times, thick buffer layers, rough surfaces, high residual strain degree, and high threading dislocation densities. These problems can result in low yields, increased costs, and poor quality in the devices that are grown on the buffers. However, it has been found that a surfactant could be used to inhibit island formation in strain layer heteroepitaxy and, therefore, promote two-dimensional growth for the development of high-quality electron devices.
Scientists at the University of California have developed a novel method of using Sb as a surfactant to promote the growth of thin, high-quality relaxed SiGe buffers.
This new technology has several uses in semiconductor production, including:
The new UC technology provides the following benefits:
|United States Of America||Issued Patent||6,995,076||02/07/2006||2000-304|