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Novel Multilayer Structure for High-Efficiency UV and Far-UV Light-Emitting Devices
Brief description not available
III-Nitride Tunnel Junction LED with High Wall Plug Efficiency
Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
(In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
A novel invention to enable the fabrication of (In,Ga,Al)N optoelectronic devices with thick active layers containing a high concentration of indium (In).
Thermally Stable, Laser-Driven White Lighting Device
A high power, laser driven white light source that maintains efficiency and color stability at high temperatures.
High-Intensity Solid State White Laser Diode
A solid state white lighting device consisting of a blue laser diode that emits light onto a single crystal phosphor, resulting in the emission of high-intensity white light.
Nitride Based Ultraviolet LED with an Ultraviolet Transparent Contact
High-Efficiency and High-Power III-Nitride Devices Grown on or Above a Strain Relaxed Template
Eliminating Misfit Dislocations with In-Situ Compliant Substrate Formation
Contact Architectures for Tunnel Junction Devices
Methods for Fabricating III-Nitride Tunnel Junction Devices
Methods of physical vapor deposition for III-nitride tunnel junction devices.
Improved Reliability & Enhanced Performance of III-Nitride Tunnel Junction Optoelectronic Devices
A structure for improving the performance and reliability of III-nitride based tunnel junction optoelectronic devices.
Stand-Alone Ceramic Phosphor Composites for Laser-Excited Solid-State White Lighting
A method for generating a stand-alone ceramic phosphor composite for use in solid state white light generating devices that successfully reduces the operating temperature of the phosphor material by 50%, increases lumen output, reduces cost of materials, and decreases preparation time.
III-N Based Material Structures and Circuit Modules Based on Strain Management
Method For The Removal Of Devices Using The Trench
Iii-N Transistor With Stepped Cap Layers
A new structure for III-N transistors that is able to maintain a high breakdown and operating voltage while improving the gain of the device.
Tunnel Junction Devices with Optically-Pumped III-Nitride Layers
A method of replacing standard electrical injection of the quantum wells in semiconductor devices with optically-pumping, by coupling a short-wavelength electrically pumped active region to a long-wavelength optically pumped region via a tunnel junction.
Photonic Devices For Converting Light Energy Into Mechanical Energy, Forces, and Displacements
Efficient Solar Cells Via Sulfur-fused Helical Perylene Diimides Design Concept
A Method To Lift-Off Nitride Materials With Electrochemical Etch