A III-nitride light emitting diode (LED), in which light can be extracted from two surfaces of the LED before entering a shaped optical element and subsequently being extracted to air.

A polarized LED and a method of fabricating and packaging the device.

UC Santa Barbara researchers have improved the performance of GaN LEDs through the addition of ZnO layers to the LED’s surfaces.

A novel luminescent cerium compound that emits bright red light when used as a phosphor.

Minimizes the re-absorption of LED light by using transparent conductive oxide electrodes (ITO or ZnO) instead of mirrors. 

Polarized white LEDs that can improve system efficiency by removing the need for an external polarizer.

An (Al, Ga, In)N light emitting device in which high light generation efficiency occurs by fabricating the device using non-polar or semi-polar GaN crystals.

Brief description not available

Novel device structures for use in LEDs grown on patterned substrates. 

A nonpolar III-nitride LED or LD that does not require any aluminum-containing cladding layers, because the quantum well active region is thick enough to function as an optical waveguide for the device.  

Brief description not available

Brief description not available

Brief description not available

A novel Ce3+-doped oxyfluoride phosphor material for solid-state lighting applications.  

A novel invention to enable the fabrication of (In,Ga,Al)N optoelectronic devices with thick active layers containing a high concentration of indium (In). 

A method of growing III-nitride films on nonpolar planes where the MQW barrier thickness can be manipulated. 

A novel approach to reducing or possibly eliminating the polarization effects in GaN-based optoelectronic devices. 

A high power, laser driven white light source that maintains efficiency and color stability at high temperatures.

A solid state white lighting device consisting of a blue laser diode that emits light onto a single crystal phosphor, resulting in the emission of high-intensity white light. 

An LED structure of GaN thin films grown by metal organic chemical vapor deposition (MOCVD) on (20-2-1) semi-polar GaN substrates that demonstrate low efficiency droop.

Brief description not available

Brief description not available

A device structure that can be used to create high-power and high-efficiency LEDs and LDs in the UV range of the spectrum. 

A new method of improving performance of group-III nitride devices by limiting the strain-relaxation on crystal substrates. 

A method for growing an improved quality device by depositing a low temperature magnesium doped nitride semiconductor thin film.