Space Confined Polymer-Based Field Effect Transistors

Professor Tolbert and colleagues have developed a polymer field effect transistor (FET) which employs a silica space-confinement structure to allow high carrier mobility. Prototype devices have demonstrated carrier mobilities of 10 cm2/Vs due to the device’s conduction along a polymer chain, rather than through an inter-chain network. Fabrication method can potentially be used to create transistors as narrow as 5 nm. This technology is well suited for applications in thin, flexible or low-cost devices, including displays, sensors, RFID and smart textiles.