Novel Nanowire Field-Effect Transistor Biosensor With Superb Sensitivity
Tech ID: 22120 / UC Case 2011-117-0
SummaryResearchers at UCLA have developed a highly sensitive, real-time, and label-free chemical and biomedical sensor in conventional silicon nanowire Field Effect Transistors (nw-FET), utilizing a built-in signal amplification mechanism to significantly improve detection sensitivity.
BackgroundThere has been an increasing demand for highly sensitive bio- and chemical sensor devices. Optical and MEMS methods provide highly specific platforms; however, problems of scalability and cost have hindered their employability in real field applications. With the recent advancements in nanotechnology, integrated systems have been developed through the use of silicon nw-FETs. However, the low level of output signal in the design of these sensors limit their potential applications.
InnovationResearchers at UCLA have developed a novel, highly-sensitive integrated biochemical sensor with significant detection performance. Through integrating a sensing nanowire with a nw-FET channel, a built-in signal amplification mechanism is introduced, which greatly enhances detection sensitivity. Additionally, because the technology is compatible with conventional silicon fabrication techniques, it provides a simple and low-cost solution to integrated biomedical and chemical sensors.
- Toxin detection, Disease diagnosis, Drug screening, Label-free biosensing (proteins, DNA, enzymes), Environmental monitoring
- Standard semiconductor processing methods
- Tunable electronic properties
State Of Development
|Patent Cooperation Treaty||Published Application||WO/2012/075445||06/07/2012||2011-117|
Additional Patent Pending
- Chui, Chi On
Nanowire FET, Chemical sensor, Biomedical Sensor, Silicon On Insulator (SOI), Schottky barrier