Method for Making a Metal Layer Semiconductor Laser
Tech ID: 22066 / UC Case 1995-308-0
A novel method for making a metal layer semiconductor laser with large bandwidth and the capability for high power output.
The power output and bandwidth of present semiconductor lasers is rapidly becoming insufficient for telecommunication systems demands. The poor microwave transmission line characteristics of current semiconductor laser structures can degrade high frequency performance, significantly limiting the bandwidth of current devices.
Researchers at the University of California, Santa Barbara have developed a novel method for making a metal layer semiconductor laser with large bandwidth and the capability for high power output. This semiconductor laser has higher bandwidth and power output capabilities than conventional semiconductor laser devices, giving it improved microwave performance for higher quality telecommunications.
- High speed operation superior to conventional semiconductor laser devices
- Improved microwave performance
- Large bandwidth
- Has the capability for higher power outputs
This technology is available for licensing.
|United States Of America||Issued Patent||6,208,007||03/27/2001||1995-308|
|United States Of America||Issued Patent||6,015,980||01/18/2000||1995-308|
|United States Of America||Issued Patent||5,977,604||11/02/1999||1995-308|
- Babic, Dubravko I.
- Bowers, John E.
- Tauber, Daniel A.
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