Method for Making a Metal Layer Semiconductor Laser
Tech ID: 22066 / UC Case 1995-308-0
Brief Description
A novel method for making a metal layer semiconductor laser with large bandwidth and the capability for high power output.
Background
The power output and bandwidth of present semiconductor lasers is rapidly becoming insufficient for telecommunication systems demands. The poor microwave transmission line characteristics of current semiconductor laser structures can degrade high frequency performance, significantly limiting the bandwidth of current devices.
Description
Researchers at the University of California, Santa Barbara have developed a novel method for making a metal layer semiconductor laser with large bandwidth and the capability for high power output. This semiconductor laser has higher bandwidth and power output capabilities than conventional semiconductor laser devices, giving it improved microwave performance for higher quality telecommunications.
Advantages
- High speed operation superior to conventional semiconductor laser devices
- Improved microwave performance
- Large bandwidth
- Has the capability for higher power outputs
Applications
- Telecommunication
This technology is available for licensing.
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 6,208,007 | 03/27/2001 | 1995-308 |
| United States Of America | Issued Patent | 6,015,980 | 01/18/2000 | 1995-308 |
| United States Of America | Issued Patent | 5,977,604 | 11/02/1999 | 1995-308 |
Inventors
- Babic, Dubravko I.
- Bowers, John E.
- Tauber, Daniel A.
Other Information
Related cases
1995-308-0
Keywords
Semiconductor Laser
Contact
Shaun R. Juncal / juncal@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #22066.
ADDITIONAL TECHNOLOGIES BY THESE INVENTORS
- High-Power Pulses From Semiconductor Lasers
- Vcsels With Improved Mirror Properties
- Technique For Creating Buried Blocking Layers For Vertical-Cavity Lasers And Other Devices
- Semiconductor Hetero-Interface Photodetector
- Fused Vertical Couplers
- Efficient Optical Time-Division Demultiplexing And Signal Regeneration
- Loss Modulated Silicon Evanescent Lasers
- Low Noise, Stable Avalanche Photodiode
- Hybrid Silicon Integrated Optical Isolator and Circulator
- Integration Of Ultra-Low Loss And Active Silicon Waveguide Layers
- Integrated Bidirectional Optical Amplifier (BOA) for Optical Interconnects
- Enhancement Of Thermoelectric Properties Through Polarization Engineering
- Improved Gallium Nitride (GaN) Thermoelectric Devices
