MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
Tech ID: 21917 / UC Case 2005-566-0
Methods for successfully growingplanar non-polar m-plane gallium nitride (GaN) with metalorganic chemical vapor deposition (MOCVD).
It is relatively easy to grow c-plane GaN due to its large growth window (pressure, temperature and precursor flows) and its stability. However, as a result of c-plane growth, each material layer suffers from separation of electrons and holes to opposite faces of the layers. Furthermore, strain at the interfaces between adjacent layers gives rise to piezoelectric polarization, causing further charge separation. Such polarization effects decrease the likelihood of electrons and holes recombining, causing the device to perform poorly.
Researchers at the University of California, Santa Barbara have developed methods for successfully growingplanar non-polar m-plane gallium nitride (GaN) with metalorganic chemical vapor deposition (MOCVD). These methods takes advantage of non-polar nature of m-plane GaN to eliminate polarization fields, and gives rise to flexibility in growth variables, such as temperature, pressure and precursor flows, utilizing the advantage of m-GaN stability during growth.
- Eliminates polarization fields
- More flexibility in growth variables
Growth of non-polar GaN films
This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
|United States Of America||Issued Patent||8,097,481||01/17/2012||2005-566|
|United States Of America||Issued Patent||7,338,828||03/04/2008||2005-566|
|United States Of America||Published Application||20120074429||03/29/2012||2005-566|
- DenBaars, Steven P.
- Imer, Bilge M.
- Nakamura, Shuji
- Speck, James S.
Galium Nitride, bulk growth, MOCVD, indssl, indbulk, cenIEE
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