Hybrid Inorganic Light-Emitting Devices
Tech ID: 21857 / UC Case 1997-136-0
Brief Description
Hybrid inorganic light emitting device/luminescent polymer light-emitting sources for efficient and cost effective white lighting and for full-color applications.
Background
Hybrid light emitting devices are a way to leverage the strengths of organic and inorganic devices, while reducing the weaknesses of each.
Description
Researchers at the University of California, Santa Barbara have developed hybrid inorganic light emitting device/luminescent polymer light-emitting sources for efficient and cost effective white lighting and for full-color applications. This invention utilizes the emission from inorganic light-emitting devices to pump the photoluminescence of organic thin films. This yields a combined emission made up of light emitted from the pump device superimposed on the photoluminescence emission for the organic thin films. The color of the light out can be controlled by color mixing, a well known process. Using the blue or blue-green LEDs in combination with luminescent polymer films as described in this invention, efficient white light emission or emission with a wide range of colors can be obtained.
Advantages
- High efficiency
- Cost effective
- Enables emissions in a wide range of colors
Applications
- Inorganic Light Emitting Devices
This technology is available for licensing. U.S. Patent No. 5,966,393.
Patent Status
| Country | Type | Number | Dated | Case |
| United States Of America | Issued Patent | 5,966,393 | 10/12/1999 | 1997-136 |
Inventors
- DenBaars, Steven P.
- Heeger, Alan J.
- Hide, Fumitomo
Other Information
Categorized As
Related cases
1997-136-0
Contact
Shaun R. Juncal / juncal@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #21857.
ADDITIONAL TECHNOLOGIES BY THESE INVENTORS
- Self-Doped Conducting Polymers
- Fabrication Of High Quality P-Type GaN and Alloys by Preventing Hydrogen Incorporation
- Conjugated Polymers As Materials For Solid-State Lasers
- Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
- Injection Lasers Fabricated From Semiconducting Polymers
- Electronic Detection Of Molecular Targets, Including Proteins, Oligonucleotides And Other Small Molecules
- Nonpolar (Al, B, In, Ga)N Quantum Well Design
- High Efficiency LED With Emitters Within Structured Materials
- Water-Soluble ETL Polymers for LEDs
- Asymmetrically Cladded Laser Diode with Improved Performance
- Yellow-Emitting Phosphors for White LEDs
- Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
- Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
- Device Structure for High Efficiency LED
- Nitride-Based LED with Optimized Efficiency
- High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
- GaN-Based Thermoelectric Device for Micro-Power Generation
- Mirrorless LED with High Luminous Efficiency
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- Growth of Planar Semi-Polar Gallium Nitride
- Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
- MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
- Low Temperature Deposition of Magnesium Doped Nitride Films
- Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
- Semipolar III-Nitride Laser Diodes with Etched Mirrors
- Method for Making a High Performance Vertical Cavity Surface Emitting Laser
- Hybrid Polymer Light-Emitting Device
- LED Structure with Low Efficiency Droop for High-Current Applications
- Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
- Low Carrier Loss Device Structure for High Performance Green LEDs
- Method for Wafer Bonding for Optoelectronic Applications
- Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
- High Efficiency LED with Optimized Photonic Crystal Extractor
- Wafer Bonding For Highly Efficient Nitride-Based LEDs
- Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
- LED Device Structures with Minimized Light Re-Absorption
- High Efficiency and High Brightness LEDs for Various Lighting Applications
- Photoelectrochemical Etching for Laser Facets
- Enhancement Of Thermoelectric Properties Through Polarization Engineering
- Two dimensionally relaxed III-N buffer layers for LEDs
- Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
- Efficient High-Power, Laser-Driven White Lighting Device
- GaN-based Green/Red Light-Emitting Diodes With Low Voltage
- Outdoor Street Light Fixture with Novel Laser Diode Light Source
- Improved LED Performance via Optimized Polarization Properties
- (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
- Controlling Contact Resistivity of Transparent Conductive Layers of Optoelectronic Devices
- Efficient Tandem Polymer Solar Cells Fabricated by All-Solution Processing
PEOPLE WHO VIEWED THIS ALSO VIEWED THESE TECHNOLOGIES BY OTHER INVENTORS
- Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
- Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
- Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
- Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
- Growth of Group III-Nitride Crystals using Supercritical Ammonia and Nitrogen
