UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

An asymmetrically cladded laser diode that achieves a low threshold current density and improved lasing behavior due to its structure.

Background

Since symmetrically cladded and clad-free laser diode structures suffer from unwanted material properties and poor performance, such as high series resistance, low hole injection and difficulty of fabrication, there is a need for a new device that avoids these problems.

Description

Researchers at the University of California, Santa Barbara have developed an asymmetrically cladded laser diode combining a lower refractive index material, such as aluminum gallium nitride, for the bottom cladding layer, and a higher refractive index material, such as gallium nitride, for the upper cladding layer. This device achieves a low threshold current density and improved lasing behavior due to its structure. Moreover, production of the device is made simpler because p-type aluminum gallium nitride, which is used in symmetrically cladded devices and is difficult to grow, is not needed.

Advantages

• Low threshold current density and improved lasing behavior

• Helps place the peak of the optical mode at the center of the active region

• Increased ease of cleaving due to asymmetric in-plane strain

• Simpler production since p-type aluminum gallium nitride, which is difficult to grow, is not needed

Applications

• Nitride-Based Laser Diodes

This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Patent Status

Inventors

• Chakraborty, Arpan
• DenBaars, Steven P.
• Lin, You-Da
• Nakamura, Shuji

Other Information

Contact

Shaun R. Juncal / juncal@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #21806.

ADDITIONAL TECHNOLOGIES BY THESE INVENTORS

• Fabrication Of High Quality P-Type GaN and Alloys by Preventing Hydrogen Incorporation
• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (VCSEL)
• Improved Manufacturing of Semiconductor Lasers
• High Efficiency LED With Emitters Within Structured Materials
• Yellow-Emitting Phosphors for White LEDs
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• Device Structure for High Efficiency LED
• Nitride-Based LED with Optimized Efficiency
• High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Mirrorless LED with High Luminous Efficiency
• Hybrid Inorganic Light-Emitting Devices
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
• Semipolar III-Nitride Laser Diodes with Etched Mirrors
• Method for Making a High Performance Vertical Cavity Surface Emitting Laser
• Faster Growth of Large III Nitride Crystals
• Higher Purity Environment for the Ammonothermal Growth of Group III Nitrides
• LED Structure with Low Efficiency Droop for High-Current Applications
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Low Carrier Loss Device Structure for High Performance Green LEDs
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Method for Wafer Bonding for Optoelectronic Applications
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Wafer Bonding For Highly Efficient Nitride-Based LEDs
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• High Efficiency and High Brightness LEDs for Various Lighting Applications
• Photoelectrochemical Etching for Laser Facets
• Enhancement Of Thermoelectric Properties Through Polarization Engineering
• Two dimensionally relaxed III-N buffer layers for LEDs
• Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
• Efficient High-Power, Laser-Driven White Lighting Device
• GaN-based Green/Red Light-Emitting Diodes With Low Voltage
• Outdoor Street Light Fixture with Novel Laser Diode Light Source
• Improved LED Performance via Optimized Polarization Properties
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Controlling Contact Resistivity of Transparent Conductive Layers of Optoelectronic Devices
• Natural Convection for Ammonothermal Growth of Group-III Nitrides
• Inhibiting Decomposition of Nitrogen-Containing Solvents during Ammonothermal Growth
• Using Off Oriented Seeds to Grow Non-Polar or Semi-Polar Group-III Nitride Crystals

PEOPLE WHO VIEWED THIS ALSO VIEWED THESE TECHNOLOGIES BY OTHER INVENTORS

• Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
• Donor-Acceptor Rod-Coil Diblock Copolymer based on P3HT containing fullerene (C¬60)
• Method of Preparing Silicon and Silicon-Germanium Nanocomposites as Thermoelectric Materials
• Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
• Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures