UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

New method to fabricate III-nitride semiconductor devices on the nitrogen-face of layers using wafer bonding and substrate removal.

Background

There are several methods of obtaining nitrogen-polar devices. The most direct method is to use a substrate that naturally provides for the N-polarity or by using surface treatments on substrates such as sapphire to generate the buffer that lead to N-polar devices.

Description

Researchers at the University of California, Santa Barbara have developed a new method to fabricate III-nitride semiconductor devices on the nitrogen-face of layers using wafer bonding and substrate removal.

Advantages

• Increased device performances
• Reductions in the sizes of passive components
• Potential for integration with conventional CMOS

Applications

• High Frequency Communication
• High Voltage Switching Applications
• LEDs
• Solar Cells

 

The technology is available for licensing.

PATENT STATUS

• Patent Pending

INVENTORS

• McCarthy, Lee S.
• Mishra, Umesh K.
• Rajan, Siddharth
• Suh, Chang Soo

Other Information

Contact

Franco Caporale/ caporale@tia.ucsb.edu / tel: 805-893-2073. Please reference Tech ID #19389.