Led Frame for Transparent Mirrorless LEDs
Tech ID: 19169 / UC Case 2007-281-0
Brief Description
A light emitting diode (LED) in which light can be extracted through all of its layers, resulting in increased light output power.Background
In a conventional LED, in order to increase the light output power from the front side of the LED, the emitted light is reflected by a mirror placed on the backside of the substrate or is reflected by a mirror coating on the lead frame, even if there are no mirrors on the backside of the sapphire substrate, and if the bonding material is transparent on the emission wavelength. However, this reflected light is re-absorbed by the emitting layer because the photon energy is almost same as the band-gap energy of the light emitting species. What is currently needed are LED structures that more effectively extract light.Description
Researchers at the University of California, Santa Barbara describes a light emitting diode (LED) in which light can be extracted mainly from two surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. All of the layers of the LED are transparent for the emission of wavelength except for the emitting layer. For this reason, the LED light is extracted effectively through all of the layers. The combination of a transparent oxide electrode with a surface roughened nitride LED and shaped lens results in high light extraction.Advantages
- Minimizes internal reflections within the LED
- Minimizes re-absorption of the LED’s light
- Increased extraction efficiency
- Increased light output power of the LEDs
Applications
LED manufacturing
This technology is available for licensing on a non-exclusive basis.
PATENT STATUS
- Patent Pending; U.S. Patent Application 20080149949 published on 26 Jun, 2008
INVENTORS
- DenBaars, Steven P.
- Nakamura, Shuji
Other Information
Categorized As
Related cases
2007-281-0, 2005-721-2, 2007-113-2, 2007-114-2, 2007-163-2, 2007-272-2
Related Technologies
Keywords
LED, Lighting
Contact
Franco Caporale/ caporale@tia.ucsb.edu / tel: 805-893-2073. Please reference Tech ID #19169.
ADDITIONAL TECHNOLOGIES BY THESE INVENTORS
- Fabrication Of High Quality P-Type Gan And Alloys
- Growth Of High-Quality Insulating Gan
- Growth Of Reduced Dislocation Density Non-Polar Gallium Nitride By Hydride Vapor Phase Epitaxy
- Technique For The Growth Of Planar, Non-Polar, A-Plane Gallium Nitride By Hydride Vapor Phase Epitaxy
- Nonpolar (Al, B, In, Ga)N Quantum Well Design
- Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (Vcsel)
- Improved Horizontal Emitting, Vertical Emitting, Beam Shaped, Distributed Feedback Lasers
- High Light Extraction Efficiency LED With Emitters Within Structured Materials
- High Quality Aluminum Nitride Films
- Mirrorless LED With High Luminous Efficiency


