Mirrorless LED With High Luminous Efficiency
Tech ID: 19168 / UC Case 2007-272-0
Brief Description
A high efficient LED with enhanced luminous efficacy for optoelectronic applications.Background
Conventional LEDs have used a high reflectivity mirror in order to increase the front emission by reflecting the LED light forward. However, this reflected emission is always partly re-absorbed by the emitting layer, reducing the efficiency or output power of the LEDs.Description
Researchers at the University of California, Santa Barbara have developed a light emitting diode (LED) in which the multi directions of light can be extracted from the surfaces of the chip before then entering the shaped plastic optical element and subsequently extracted to air. The present invention combines the high light extraction efficiency LED chip with shaped phosphor layers to increase the total luminous efficacy of the device.Advantages
- Minimizes the re-absorption of LED light
- Minimizes the internal reflection of LED light
- Increases the total luminous efficacy of the device
- Increases light output power of the LEDs
- Extracts more light out of the LEDs
Applications
- LEDs manufacturing
- Optoelectronic applications
This technology is available for licensing on a non-exclusive basis.
PATENT STATUS
- U.S. Patent 7,687,813 issued on 30 Mar, 2010
INVENTORS
- DenBaars, Steven P.
- Nakamura, Shuji
Other Information
Categorized As
Related cases
2007-272-0, 2005-721-2, 2007-113-2, 2007-114-2, 2007-163-2, 2007-281-2
Related Technologies
Keywords
LED, optoelectronic
Contact
Franco Caporale/ caporale@tia.ucsb.edu / tel: 805-893-2073. Please reference Tech ID #19168.
ADDITIONAL TECHNOLOGIES BY THESE INVENTORS
- Fabrication Of High Quality P-Type Gan And Alloys
- Growth Of High-Quality Insulating Gan
- Growth Of Reduced Dislocation Density Non-Polar Gallium Nitride By Hydride Vapor Phase Epitaxy
- Technique For The Growth Of Planar, Non-Polar, A-Plane Gallium Nitride By Hydride Vapor Phase Epitaxy
- Nonpolar (Al, B, In, Ga)N Quantum Well Design
- Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (Vcsel)
- Improved Horizontal Emitting, Vertical Emitting, Beam Shaped, Distributed Feedback Lasers
- High Light Extraction Efficiency LED With Emitters Within Structured Materials
- High Quality Aluminum Nitride Films
- Led Frame for Transparent Mirrorless LEDs


