UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

Novel LEDs, where the emission region is structured for efficient light extraction.

Background

The fabrication of semiconductor nanostructures through patterning of planar layers is a well known technique. With the group-III nitrides emerging as one of the most investigated semiconductor materials, nitride nanostructures have also gained increasing attention in the past years. The nitride alloy system is of great interest for a wide range of applications, in particular, for light emitting diodes (LEDs) and laser diodes operating in the visible and UV range of the electromagnetic spectrum.

Description

Researchers at UCSB have developed novel LEDs, where the emission region is structured in order to have efficient light extraction. The structuring is designed for light extraction from thin films, such as photonic crystal acting as a diffraction grating. In addition, the structuring controls in-plane emission and allows new modes into which light will be emitted.

Advantages

• High internal efficiency and light extraction
• Excellent carrier injection
• Maximum interaction between photonic crystal and the emitting layer

Applications

• Optoelectronics
• Inorganic semiconductors
• Organic light-emitting small molecules or polymers  

 

This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Patent Status

Country	Type	Number	Dated	Case
United States Of America	Issued Patent	7,977,694	07/12/2011	2007-113

Inventors

• David, Aurelien
• DenBaars, Steven P.
• Keller, Stacia
• Weisbuch, Claude C.

Other Information

Contact

Franco Caporale / caporale@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #19158.

ADDITIONAL TECHNOLOGIES BY THESE INVENTORS

• Fabrication Of High Quality P-Type GaN and Alloys by Preventing Hydrogen Incorporation
• Growth Of High-Quality Insulating Gan
• Method To Reduce The Dislocation Density In Group III- Nitride Films
• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Improved Manufacturing of Semiconductor Lasers
• Fabrication Method for Efficient Long Wavelength Nitride-Based LEDs
• LED with Reduced Droop Effect for High-Power Applications
• Low Resistance Ohmic Cathode Electrodes for Optical Devices
• Light Emitting Device with Coupled Quantum Well
• Light Emitting Device with Stair Quantum Well
• Asymmetrically Cladded Laser Diode with Improved Performance
• Fabrication Method for High Current Density Heterojunction Field Effect Transistors (HFETS) for Use in Power Applications
• Yellow-Emitting Phosphors for White LEDs
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Group-III Nitride Solar Cells Grown on High Quality Crystals
• Fabrication Method for Textured III-V Semiconductor Film Applicable to Solar Cells, LEDs and Laser Diodes
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• Device Structure for High Efficiency LED
• Nitride-Based LED with Optimized Efficiency
• Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
• High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
• GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
• Mirrorless LED with High Luminous Efficiency
• Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
• Hybrid Inorganic Light-Emitting Devices
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Growth of Planar Semi-Polar Gallium Nitride
• Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
• Low Resistance Contacts for Nonpolar and Semipolar Nitride Devices
• Semipolar III-Nitride Laser Diodes with Etched Mirrors
• Controlling the Surface Morphology of III-Nitride Thin Films on Semipolar Substrates
• Fabrication of Optoelectronic Devices with Embedded Void-Gap Structures
• High Extraction Efficiency GaN LED
• Method for Making a High Performance Vertical Cavity Surface Emitting Laser