UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

Novel LEDs, where the emission region is structured in order to have efficient light extraction.

Background

The fabrication of semiconductor nanostructures through patterning of planar layers is a well known technique. With the group-III nitrides emerging as one of the most investigated semiconductor materials, nitride nanostructures have also gained increasing attention in the past years. Nitride alloy systems are of great interest for a wide range of applications, in particular, for light emitting diodes (LEDs) and laser diodes operating in the visible and UV range of the electromagnetic spectrum.

Description

Researchers at UCSB have developed novel LEDs, where the emission region is structured in order to have efficient light extraction. The structuring is designed for light extraction from thin films, such as photonic crystal acting as a diffraction grating. In addition, the structuring controls in-plane emission and allows new modes into which light will be emitted.  By embedding the photonic crystal within the emitting layer, one achieves maximum interaction between the structure guided modes and the crystal, reducing the size of the crystal.

Advantages

• High internal efficiency and light extraction

• Excellent carrier injection

• Maximum interaction between photonic crystal and the emitting layer

Applications

• LEDs

• Laser diodes  

This technology is available for licensing.

Patent Status

Inventors

• David, Aurelien J.
• DenBaars, Steven P.
• Keller, Stacia
• Weisbuch, Claude C.

Other Information

Contact

Shaun R. Juncal / juncal@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #19158.

ADDITIONAL TECHNOLOGIES BY THESE INVENTORS

• Fabrication Of High Quality P-Type GaN and Alloys by Preventing Hydrogen Incorporation
• Method To Reduce The Dislocation Density In Group III- Nitride Films
• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Improved Manufacturing of Semiconductor Lasers
• Asymmetrically Cladded Laser Diode with Improved Performance
• Yellow-Emitting Phosphors for White LEDs
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• Device Structure for High Efficiency LED
• Nitride-Based LED with Optimized Efficiency
• Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
• High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Mirrorless LED with High Luminous Efficiency
• Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
• Hybrid Inorganic Light-Emitting Devices
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Growth of Planar Semi-Polar Gallium Nitride
• Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
• Semipolar III-Nitride Laser Diodes with Etched Mirrors
• Fabrication of Optoelectronic Devices with Embedded Void-Gap Structures
• Method for Making a High Performance Vertical Cavity Surface Emitting Laser
• LED Structure with Low Efficiency Droop for High-Current Applications
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Low Carrier Loss Device Structure for High Performance Green LEDs
• High Efficiency Group-III Nitride/Non-Group-III Nitride Tandem Solar Cells
• Method for Wafer Bonding for Optoelectronic Applications
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Wafer Bonding For Highly Efficient Nitride-Based LEDs
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• High Efficiency and High Brightness LEDs for Various Lighting Applications
• Photoelectrochemical Etching for Laser Facets
• Single chamber growth to produce high quality oxide/semiconductor interfaces for power and microwave electronics
• Enhancement Of Thermoelectric Properties Through Polarization Engineering
• Improved Gallium Nitride (GaN) Thermoelectric Devices
• Two dimensionally relaxed III-N buffer layers for LEDs
• Novel Layer Structure for Semipolar InGaN/GaN LEDs and Laser Diodes
• Efficient High-Power, Laser-Driven White Lighting Device
• GaN-based Green/Red Light-Emitting Diodes With Low Voltage
• Outdoor Street Light Fixture with Novel Laser Diode Light Source
• Improved LED Performance via Optimized Polarization Properties
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Fabrication of Green LEDs with Improved Performance
• Controlling Contact Resistivity of Transparent Conductive Layers of Optoelectronic Devices

PEOPLE WHO VIEWED THIS ALSO VIEWED THESE TECHNOLOGIES BY OTHER INVENTORS

• Photoelectrochemical Wet Etching Of Group III Nitrides
• Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (VCSEL)
• Light Absorbing Polymeric Material for Organic Photovoltaic Devices
• Use of Flux Method to Grow Seed Crystals for Ammonothermal Growth of Group-III Nitride Crystal Crystal Growth
• Photonic Arbitrary Waveform Generator