UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

A method of fabricating a semiconductor laser incorporating buried grating mirrors and photonic crystals, and more particularly, novel structures grown on substrates patterned by these gratings and photonic crystals.

Background

Nitride lasers are extremely difficult to manufacture, so there is a need for improved methods of fabricating horizontal emitting, vertical emitting, beam shaped and distributed feedback lasers by growth over a patterned substrate with multiple overgrowth.

Description

Researchers at UCSB have developed a method of fabricating a semiconductor laser incorporating buried grating mirrors and photonic crystals, and more particularly, novel structures grown on substrates patterned by these gratings and photonic crystals. Each patterned layer may be engineered to act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element, etc. for the active layers. These novel laser structures rely on active layers directly grown on patterned substrates with multiple lateral epitaxial overgrowth (LEO) layers to improve contact structures and reduce waveguiding loss by contact electrodes.

Advantages

• Improved operation of the laser
  
• Improved contact structures and reduced waveguiding loss by contact electrodes
• Planar fabrication process makes this invention easily manufacturable at low cost.

Applications

• fiber optic networks
• instrumentation lasers
• optical spectroscopy

 

Limited rights available for license, please contact TIA for more information. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Patent Status

Country	Type	Number	Dated	Case
United States Of America	Issued Patent	7,768,024	08/03/2010	2005-721

Additional Patent Pending

Inventors

• Nakamura, Shuji
• Weisbuch, Claude C.

Other Information

Contact

Franco Caporale / caporale@tia.ucsb.edu / tel: View Phone Number. Please reference Tech ID #18968.

ADDITIONAL TECHNOLOGIES BY THESE INVENTORS

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Electrically-Pumped Vertical-Cavity Surface-Emitting Laser (VCSEL)
• High Efficiency LED With Emitters Within Structured Materials
• Fabrication Method for Efficient Long Wavelength Nitride-Based LEDs
• LED with Reduced Droop Effect for High-Power Applications
• Low Resistance Ohmic Cathode Electrodes for Optical Devices
• Light Emitting Device with Coupled Quantum Well
• Asymmetrically Cladded Laser Diode with Improved Performance
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Group-III Nitride Solar Cells Grown on High Quality Crystals
• Fabrication Method for Textured III-V Semiconductor Film Applicable to Solar Cells, LEDs and Laser Diodes
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• Device Structure for High Efficiency LED
• Nitride-Based LED with Optimized Efficiency
• Selective Dry Etching of N-Face (Al, In, Ga)N Heterostructures
• High-Efficiency, White, Single, or Multi-Color LED by Photon Recycling
• GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
• Mirrorless LED with High Luminous Efficiency
• Method for Producing GaN Substrates for Electronic and Optoelectronic Devices
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Photonic Structures for Efficient Light Extraction and Conversion in Multi-Color LEDs
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Long Wavelength Nonpolar and Semipolar Nitride-Based Laser Diodes
• Low Resistance Contacts for Nonpolar and Semipolar Nitride Devices
• Semipolar III-Nitride Laser Diodes with Etched Mirrors
• Controlling the Surface Morphology of III-Nitride Thin Films on Semipolar Substrates
• Fabrication of Optoelectronic Devices with Embedded Void-Gap Structures
• High Extraction Efficiency GaN LED
• Use of Flux Method to Grow Seed Crystals for Ammonothermal Growth of Group-III Nitride Crystal Crystal Growth
• Method for Ammonothermal Growth of Highly Pure Group-III Nitrides