UNIVERSITY of CALIFORNIA, SANTA BARBARA

Brief Description

A novel way to reduce device resistances by utilizing a two dimensional electron gas (TDEG) structure.

Background

The wall plug efficiency (electrical power converted to optical power) of the hybrid silicon laser is primarily limited by device resistance and carrier injection efficiency. A major problem with advanced electron gas silicon laser designs is that they utilize a bulk n-type InP contact layer with high resistance. This reduces the laser wall plug efficiency and causes significant parasitic heating of the active laser region.

Description

Researchers at the University of California, Santa Barbara have developed a novel way to reduce device resistances by utilizing a two dimensional electron gas (TDEG) structure. Conservative simulations show a reduction in n-layer resistance of 150-200% using a TDEG, resulting in an improvement in wall plug efficiency from 5-9%. Reducing the n-contact layer resistance also decreases the amount of parasitic heating, which allows laser operation at higher ambient temperatures and higher output powers under elevated bias current conditions.

Advantages

• Improvement in wall plug efficiency from 5% to 9%
• Laser operation at higher ambient temperatures and higher output powers
• Increased reliability and power output
• Improvement in electrical conductivity and defect blocking
• High mobility and conductivity

Applications

• Hybrid silicon laser
• High performance semiconductor lasers
• Optical amplifiers
• Modulators
• Photodetectors

 

The technology is available for licensing.

INVENTORS

• Bowers, John E.
• Liang, Di
• Sysak, Matthew N.

Other Information

Contact

Franco Caporale/ caporale@tia.ucsb.edu / tel: 805-893-2073. Please reference Tech ID #18964.