Organic-inorganic hybrid perovskites have demonstrated tremendous potential for next-generation electronic and optoelectronic devices due to their remarkable carrier dynamics. However, current studies of electronic and optoelectronic devices have been focused on polycrystalline materials, due to the challenges in synthesizing device compatible high quality single crystalline materials.

Broadband absorbers are essential components of many light detection, energy harvesting and camouflage schemes. Materials that “perfectly” absorb light already exist, but they are bulky and can break when bent. They also cannot be controlled to absorb only a selected range of wavelengths, which is a disadvantage for certain applications. In addition, transferring planar materials to flexible, thin or low-cost substrates poses a significant challenge.

Controlling the magnetic properties of ferromagnetic (FM) layers without magnetic fields is an on-going challenge in condensed matter science with multiple technological implications. External stimuli (e.g., light, electric field) and proximity effects (e.g., materials susceptible to external driving forces) are the most used methods to control the magnetic properties. An interesting possibility along these lines is offered by ferromagnets in proximity to materials that undergo metal-insulator (MIT) and structural phase transition (SPT). SPT and MIT are usually driven by temperature but they may also be driven by current, light and pressure.   Thus, if the magnetism of the FM is affected by the proximity to materials that undergo MIT, then tuning the magnetic properties by multiple stimuli may become possible.

Organic thin-film transistors (OTFTs) have great potential for use in displays, optoelectronics, logic circuits, and sensors. OTFTs suffer from drift, which is the on state and off state current change over time due to bias stress. Bias stress is the accumulation of charge in the organic films. This is a ubiquitous phenomenon in organic/polymer semiconductors because these materials always have trap states, which are defects that hold charge. In an OTFT transistor, all the conductivity occurs in the first 5 monolayers (about 2nm) of semiconductor. All the rest of the organic/polymeric semiconductor is just excess material, which contains traps that can degrade the device performance. Over time, the organic/polymeric films absorb molecules from the atmosphere creating bias stress.